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october 2015 docid026547 rev 3 1 / 13 this is information on a product in full production. www.st.com STP220N6F7 n - channel 60 v, 0.0021 typ., 120 a, stripfet? f7 power mosfet in a to - 220 package datasheet - production data figure 1 : internal schematic diagram features order code v ds r ds(on)max i d p tot STP220N6F7 60 v 0.0024 ? 120 a 237 w ? among the lowest r ds(on) on the market ? excellent figure of merit (fom) ? low c rss /c iss ratio for emi immunity ? high avalanche ruggedness applications ? switching applications description this n - channel power mosfet utilizes stripfet? f7 technolog y with an enhanced trench gate structure that results in very low on - state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. table 1: device summary order code marking package packaging STP220N6F7 220n6f7 to - 220 tube
contents STP220N6F7 2 / 13 docid026547 rev 3 contents 1 electrical ratings ................................ ................................ ............. 3 2 electrical characteristics ................................ ................................ 4 2.1 electrical characteri stics (curves) ................................ ...................... 6 3 test circuits ................................ ................................ ..................... 8 4 package mechanical data ................................ ............................... 9 4.1 to - 220 package mechanical data ................................ .................. 10 5 revision history ................................ ................................ ............ 12
STP220N6F7 electrical ratings docid026547 rev 3 3 / 13 1 electrical ratings table 2: absolute maximum ratings symbol parameter value unit v ds drain - source voltage 60 v v gs gate - source voltage 20 v i d (1) drain current (continuous) 120 a i d (1) drain current (continuous) at t c = 100 c 120 a i dm (2) drain current (pulsed) t c = 25 c 480 a p tot total dissipation at t c = 25 c 237 w e as (3) single pulse avalanche energy 1 j t j operating junction temperature - 55 to 175 c t stg storage temperature c notes: (1) current limited by package (2) pulse width is limited by safe operating area (3) starting t j = 25c, i d = 20 a, v dd = 50 v table 3: thermal data symbol parameter value unit r thj - case thermal resistance junction - case max 0.63 c/w r thj - amb thermal resistance junction - ambient max 62.5 c/w
electrical characteristics STP220N6F7 4 / 13 docid026547 rev 3 2 electrical characteristics (t c = 25 c unless otherwise specified) table 4: on /off states symbol parameter test conditions min. typ. max. uni t v (br)dss drain - source breakdown voltage v gs = 0, i d = 1 ma 60 v i dss zero gate voltage drain current v gs = 0, v ds = 60 v 1 a v gs = 0, v ds = 60 v, t c = 125 c 100 a i gss gate - body leakage current v ds = 0, v gs = + 20 v 100 na v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 2 4 v r ds(on) static drain - source on - resistance v gs = 10 v, i d = 60 a 0.002 1 0.002 4 ? table 5: dynamic symbol parameter test conditions min. typ. max. uni t c iss input capacitance v gs = 0, v ds = 25 v, f = 1 mhz - 6400 - pf c oss output capacitance - 3880 - pf c rss reverse transfer capacitance - 175 - pf q g total gate charge v dd = 30 v, i d = 120 a, v gs = 10 v (see figure 14: "test circuit for gate charge behavior" ) - 100 - nc q gs gate - source charge - 36 - nc q gd gate - drain charge - 24 - nc table 6: switching times symbol parameter test conditions min. typ. max . unit t d(on) turn - on delay time v dd = 30 v, i d = 60 a, r g = 4.7 ?, v gs = 10 v (see figure 13: "test circuit for resistive load switching times" ) - 33 - ns t r rise time - 103 - ns t d(off) turn - off delay time - 54 - ns t f fall time - 29 - ns
STP220N6F7 electrical characteristics docid026547 rev 3 5 / 13 table 7: source drain diode symbol parameter test conditions min . typ . max . un it v sd (1) forward on voltage v gs = 0, i sd = 120 a - - 1.1 v t rr reverse recovery time i sd = 120 a, di/dt = 100 a/s v dd = 48 v, t j = 150 c (see figure 15: "test circuit for inductive load switching and diode recovery times" ) - 69 ns q rr reverse recovery charge - 104 nc i rrm reverse recovery current - 3 a notes: (1) pulsed: pulse duration = 300 s, duty cycle 1.5%
electrical characteristics STP220N6F7 6 / 13 docid026547 rev 3 2.1 electrical characteristics (curves) figure 2 : safe operating area figure 3 : thermal impedance figure 4 : output characteristics figure 5 : transfer characteristics figure 6 : gate charge vs gate - source voltage figure 7 : static drain - source on - resistance gipg05 1 12014 1 159m t i d 100 0 0 4 v gs (v) 8 (a) 2 6 v ds =4v 50 150 200 250 300 350 gipg05 1 120141354m t r ds(on) 2.10 2.06 2.02 0 20 i d (a) (m ) 2.14 v gs =10v 40 2.18 2.22 80 60 100 120 gipg05 1 120141204m t v gs 6 4 2 0 0 60 q g (nc) (v) 8 100 10 v ds =30v i d =120 a 12 20 40 80 120 0.05 0.02 0.01 0.1 0.2 gipg05 1 12014 1 133m t i d 10 0.1 1 v ds (v) 10 (a) operation in this area is limited by max r ds(on) 1ms 10s 1 tj=175c t c=25c single pulse 100s 100 gipg05 1 12014 1 150m t i d 0 0 2 v ds (v) 4 (a) 6 7v v gs =8, 9, 10v 8 5v 6v 50 100 150 200 250 300 350 400
STP220N6F7 electrical characteristics docid026547 rev 3 7 / 13 figure 8 : capacitance variations figure 9 : normalized gate threshold voltage vs temperature figure 10 : normalized on - resistance vs temperature figure 11 : normalized v(br)dss vs temperature figure 12 : source - drain diode forward characteristics c 1000 100 10 0.1 10 v ds (v) (pf) 1 ciss coss crss 10000 gipg05 1 120141219m t gipg05 1 120141232m t v gs(th) 0.40 -75 t j (c) (norm) -25 75 25 125 i d =250 a 175 0.50 0.60 0.70 0.80 0.90 1.00 1.10 gipg05 1 120141240m t r ds(on) 1.00 0.80 0.60 -75 t j (c) (norm) -25 75 25 125 v gs =10v i d =60 a 175 1.20 1.40 1.60 1.80 gipg05 1 120141245m t v (br)dss -75 t j (c) (norm) -25 75 25 125 0.96 0.98 1.00 1.02 i d =1m a 1.04 175 gipg05 1 120141326m t v sd 10 50 i sd (a) (v) 30 1 10 70 90 0.50 t j =-55c t j =175c t j =25c 0.60 0.70 0.80 0.90 1.00
test circuits STP220N6F7 8 / 13 docid026547 rev 3 3 test circuits figure 13 : test circuit for resistive load switching times figure 14 : test circuit for gate charge behavior figure 15 : test circuit for inductive load switching and diode recovery times figure 16 : unclamped inductive load test circuit figure 17 : unclamped inductive waveform figure 18 : switchin g time waveform
STP220N6F7 package mechanical data docid026547 rev 3 9 / 13 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, dependi ng on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com. ecopack ? is an st trademark.
package mechanical data STP220N6F7 10 / 13 docid026547 rev 3 4.1 to - 220 package mechanical data figure 19 : to - 220 type a package outline
STP220N6F7 package mech anical data docid026547 rev 3 11 / 13 table 8: to - 220 type a mechanical data dim. mm min. typ. max. a 4.40 4.60 b 0.61 0.88 b1 1.14 1.70 c 0.48 0.70 d 15.25 15.75 d1 1.27 e 10 10.40 e 2.40 2.70 e1 4.95 5.15 f 1.23 1.32 h1 6.20 6.60 j1 2.40 2.72 l 13 14 l1 3.50 3.93 l20 16.40 l30 28.90 ?p 3.75 3.85 q 2.65 2.95
revision history STP220N6F7 12 / 13 docid026547 rev 3 5 revision history table 9: document revision history date revision changes 17 - jun - 2014 1 initial release. 05 - nov - 2014 2 updated title and features in cover page. updated electrical rating and electrical characteristics. added electrical characteristics (curves) . minor text changes. 07 - oct - 2015 3 document status promoted from preliminary to production data.
STP220N6F7 docid026547 rev 3 13 / 13 important notice C please read carefully stmicroelectronics nv and its subsidiaries (st) reserve the right to make changes, corrections, enhancements, modifications , and improvements to st products and/or to this document at any time without notice. purchasers s hould obtain the latest relevant information on st products before placing orders. st products are sold pursuant to sts terms and conditions of sale in place at the time of or der acknowledgement. purchasers are solely responsible for the choice, select ion, and use of st products and st assumes no liability for application assistance or the design of purchasers products. no license, express or implied, to any intellectual property right is granted by st herein. resale of st products with provisions different from the information set forth herein shall void any warranty granted by st for such product. st and the st logo are trademarks of st. all other product or service names are the property of their respective owners. information in this document supersedes and replaces information previously supplied in any prior versions of this document. ? 2015 stmicroelectronics C all rights reserved

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